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| STP95N04 STD95N04 N-CHANNEL 40V - 5.4m - 80A - DPAK - TO-220 STripFETTM Power MOSFET General features Type STD95N04 STP95N04 VDSS 40V 40V RDS(on) <6.5m <6.5m ID 80A 80A Pw 110W 110W 3 1 1 2 3 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DPAK TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications HIGH CURRENT,SWITCHING APPLICATION AUTOMOTIVE Order codes Sales Type STD95N04 STP95N04 Marking D95N04 P95N04 Package DPAK TO-220 Packaging TAPE & REEL TUBE December 2005 Rev 3 1/14 www.st.com 14 1 Electrical ratings STD95N04 - STP95N04 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-source Voltage (VGS=0) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Value 40 20 80 65 320 110 0.73 8 400 -55 to 175 Unit V V A A A W W/C V/ns mJ C Symbol VDS VGS ID Note 1 ID IDM Note 2 PTOT dv/dt Note 3 Peak Diode Recovery voltage slope EAS Note 4 Tj Tstg Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Table 2. Thermal data TO-220 DPAK 1.36 62.5 -300 -50 -C/W C/W C/W C Rthj-case Rthj-a Rthj-pcb Note 5 Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2/14 STD95N04 - STP95N04 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250A, V GS= 0 VDS = Max Rating, VDS = Max Rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 40A 2 5.4 Min. 40 10 100 200 Typ. Max. Unit V A A nA V m IGSS VGS(th) RDS(on) 4 6.5 Table 4. Symbol gfs Note 6 Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS =25V, ID=40A Min. Typ. 100 2200 580 40 40 11 8 54 Max. Unit S pF pF pF nC nC nC Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=20V, ID = 80A VGS =10V (see Figure 13) 3/14 2 Electrical characteristics STD95N04 - STP95N04 Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test Conditions VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 12) VDD=20V, ID= 40A, RG=4.7, VGS=10V (see Figure 12) Min. Typ. 15 50 Max. Unit ns ns Turn-off Delay Time FallTime 40 15 ns ns Table 6. Symbol ISD ISDM Note 2 VSDNote 6 trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=80A, V GS=0 ISD=80A, di/dt = 100A/s, VDD=30V, Tj=150C 45 60 2.8 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A (1) Current limited by package (2) Pulse width limited by safe operating area (3) ISD 80 A, di/dt 400A/s, VDS V(BR)DSS, Tj Tjmax (4) Starting Tj=25C, Id =40A, Vdd=30V (5) When mounted on 1inch FR4 2Oz Cu board (6)Pulsed: pulse duration = 300s, duty cycle 1.5% 4/14 STD95N04 - STP95N04 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area Figure 2. Thermal Impedance Figure 1. Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Static Drain-source on Resistance Figure 6. Normalized BVDSS vs Temperature 5/14 2 Electrical characteristics STD95N04 - STP95N04 Capacitance Variations Figure 7. Gate Charge vs Gate-source Voltage Figure 8. Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-drain Diode Forward Characteristics 6/14 STD95N04 - STP95N04 3 Test circuits 3 Test circuits Figure 13. Gate Charge Test Circuit Figure 12. Switching Times Test Circuit for Resistive Load Figure 14. Test Circuit for Inductive Load Switching and Diode Recovery Times Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveform Figure 17. Switching Time Waveform 7/14 3 Test circuits STD95N04 - STP95N04 Figure 18. Diode Reverse Recovery Waveform 8/14 STD95N04 - STP95N04 4 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 4 Package mechanical data STD95N04 - STP95N04 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 10/14 STD95N04 - STP95N04 4 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/14 5 Packing mechanical data STD95N04 - STP95N04 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 STD95N04 - STP95N04 6 Revision History 6 Revision History Date 24-Oct-2005 07-Dec-2005 Revision 2 3 Inserted ecopack indication Complete version Changes 13/14 6 Revision History STD95N04 - STP95N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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